CPC H01L 21/76251 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02598 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 21/02381 (2013.01)] | 8 Claims |
1. A device, comprising:
a number of CMOS components formed on a first substrate;
a second substrate attached to the first substrate, wherein the second substrate comprises:
a first layer of single crystal silicon germanium formed on a surface of the second substrate;
a first layer of single crystal silicon formed on a surface of the single crystal silicon germanium; and
repeating iterations of layers of single crystal silicon germanium and single crystal silicon forming a vertical stack of alternating single crystal silicon and single crystal silicon germanium layers.
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