US 11,869,777 B2
Substrate processing method and substrate processing apparatus
Fumihiro Kamimura, Kumamoto (JP); Masatoshi Kasahara, Kumamoto (JP); Teruomi Minami, Kumamoto (JP); and Ikuo Sunaka, Kumamoto (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 24, 2020, as Appl. No. 17/030,488.
Claims priority of application No. 2019-177637 (JP), filed on Sep. 27, 2019.
Prior Publication US 2021/0098271 A1, Apr. 1, 2021
Int. Cl. H01L 21/67 (2006.01); B08B 3/04 (2006.01); B08B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/67051 (2013.01) [B08B 3/04 (2013.01); B08B 7/0014 (2013.01); H01L 21/02057 (2013.01); H01L 21/67248 (2013.01); H01L 21/68764 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
increasing a temperature of a substrate by supplying a heated liquid directly to a second surface of a substrate that is an opposite surface to a first surface of the substrate to heat the substrate;
after the increasing the temperature of the substrate, forming a liquid film of a pre-wetting liquid on the first surface of the substrate by supplying the pre-wetting liquid to the first surface of the substrate while heating and rotating the substrate at a first rotational speed;
after the forming the liquid film, processing the first surface of the substrate with a chemical liquid by supplying the chemical liquid to the first surface of the substrate while heating and rotating the substrate at a second rotational speed that is lower than the first rotational speed; and
after the processing the first surface of the substrate, decreasing the temperature of the substrate,
wherein the heated liquid is discarded through a drain line until a temperature of the heated liquid reaches a predetermined value, and
when the heated liquid reaches the predetermined value, the heated liquid is supplied to the second surface of the substrate in the increasing the temperature of the substrate.