US 11,869,768 B2
Method of forming transition metal dichalcogenide thin film
Changhyun Kim, Seoul (KR); Sang-Woo Kim, Yongin-si (KR); Kyung-Eun Byun, Seongnam-si (KR); Hyeonjin Shin, Suwon-si (KR); Ahrum Sohn, Pyeongtaek-si (KR); and Jaehwan Jung, Daejeon (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Gyeonggi-do (KR)
Filed on Dec. 9, 2022, as Appl. No. 18/063,909.
Application 18/063,909 is a continuation of application No. 16/851,675, filed on Apr. 17, 2020, granted, now 11,545,358.
Claims priority of application No. 10-2019-0095165 (KR), filed on Aug. 5, 2019.
Prior Publication US 2023/0114347 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/02568 (2013.01) [H01L 21/0242 (2013.01); H01L 21/02376 (2013.01); H01L 21/02417 (2013.01); H01L 21/02488 (2013.01); H01L 21/02631 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of forming a thin film of transition metal dichalcogenide, the method comprising:
providing a substrate in a reaction chamber;
depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and
injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature,
wherein the first temperature is about 500° C. to about 800° C. and the second temperature is about 800° C. to about 1200° C., and
wherein a process pressure for the heat-treating the transition metal dichalcogenide thin film is about 1 torr to about 10 torr, and a deposition pressure for the depositing the transition metal dichalcogenide thin film on the substrate is about 0.1 mTorr to about 10 mTorr.