US 11,869,765 B2
Semiconductor device including epitaxial region
Gyeom Kim, Hwaseong-si (KR); Dongwoo Kim, Incheon (KR); Jihye Yi, Suwon-si (KR); Jinbum Kim, Seoul (KR); Sangmoon Lee, Suwon-si (KR); and Seunghun Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 30, 2022, as Appl. No. 17/853,990.
Application 17/853,990 is a continuation of application No. 17/006,799, filed on Aug. 29, 2020, granted, now 11,380,541.
Claims priority of application No. 10-2019-0148399 (KR), filed on Nov. 19, 2019.
Prior Publication US 2022/0336214 A1, Oct. 20, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 23/532 (2006.01); B82Y 10/00 (2011.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 21/28 (2006.01)
CPC H01L 21/02293 (2013.01) [H01L 21/28518 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 23/485 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/41766 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66439 (2013.01); H01L 29/66553 (2013.01); H01L 29/775 (2013.01); H01L 29/7848 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an isolation layer on the substrate;
an active region penetrating through the isolation layer and extending in a first direction;
a source/drain on a first portion of the active region;
an interlayer insulating layer on the isolation layer and the source/drain;
a contact structure penetrating through the interlayer insulating layer and contacting the source/drain; and
an insulating spacer between the interlayer insulating layer and the contact structure,
wherein the source/drain includes:
a base epitaxial region on the first portion of the active region;
a first epitaxial region on the base epitaxial region and having a recessed surface; and
a second epitaxial region on the recessed surface of the first epitaxial region,
wherein the second epitaxial region vertically overlaps the insulating spacer and the contact structure,
wherein an upper end of the first epitaxial region is at a higher level than an upper end of the second epitaxial region,
wherein the insulating spacer contacts the first epitaxial region and the second epitaxial region, and
wherein the first direction is parallel to an upper surface of the substrate.