US 11,869,753 B2
Plasma processing apparatus
Takahiro Senda, Miyagi (JP); Yuzo Uemura, Miyagi (JP); Yusei Kuwabara, Miyagi (JP); and Tomoya Ujiie, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 15, 2021, as Appl. No. 17/502,406.
Claims priority of application No. 2020-176181 (JP), filed on Oct. 20, 2020.
Prior Publication US 2022/0122814 A1, Apr. 21, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32651 (2013.01) [H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01J 37/32935 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a processing chamber;
a placing table disposed in the processing chamber to place a substrate thereon;
an upper electrode facing the placing table;
a first member configured to adjust a temperature of the upper electrode;
a first sensor provided within the first member and configured to measure the temperature of the upper electrode; and
a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz, wherein a leading end of the first sensor is in contact with the first sheet member;
a ground electrode, disposed around the upper electrode, having a ground potential;
a second member configured to adjust a temperature of the ground electrode;
a second sensor provided within the second member and configured to measure the temperature of the ground electrode; and
a second sheet member, disposed between the ground electrode and the second sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz, wherein a leading end of the second sensor is in contact with the second sheet member.