US 11,869,751 B2
Upper electrode and substrate processing apparatus including the same
Byungjo Kim, Seoul (KR); Sangki Nam, Seongnam-si (KR); Jungmin Ko, Seoul (KR); Kwonsang Seo, Suwon-si (KR); Seungbo Shim, Seoul (KR); and Younghyun Jo, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 21, 2022, as Appl. No. 18/085,949.
Application 18/085,949 is a continuation of application No. 17/188,064, filed on Mar. 1, 2021, granted, now 11,545,344.
Claims priority of application No. 10-2020-0102156 (KR), filed on Aug. 14, 2020.
Prior Publication US 2023/0123891 A1, Apr. 20, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/32541 (2013.01) [H01J 37/32642 (2013.01); H01J 37/32715 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing method using a substrate processing apparatus, the substrate processing method comprising:
preparing a substrate;
forming a plasma; and
applying, by the substrate processing apparatus, a plasma-etching process to the substrate,
wherein the substrate processing apparatus includes an upper electrode, and the upper electrode includes:
a bottom surface including a center region and an edge region, the edge region having a ring shape and surrounding the center region, and
a first protrusion portion protruding toward the plasma from the edge region and having the ring shape,
wherein the first protrusion portion includes a first apex corresponding to a local maximum thickness of the upper electrode in a vertical direction toward the plasma, the bottom surface configured to face the substrate with the plasma between, and
a first distance, which is a first radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of the substrate.