US 11,869,598 B2
Nonvolatile memory devices having adaptive write/read control to improve read reliability and methods of operating the same
Jihwa Lee, Namyangju-si (KR); Youhwan Kim, Ansan-si (KR); Kyungduk Lee, Seongnam-si (KR); and Hosung Ahn, Gwangmyeong-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 20, 2022, as Appl. No. 17/579,902.
Claims priority of application No. 10-2021-0083119 (KR), filed on Jun. 25, 2021.
Prior Publication US 2022/0415404 A1, Dec. 29, 2022
Int. Cl. G11C 16/16 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/30 (2006.01); G11C 16/28 (2006.01)
CPC G11C 16/16 (2013.01) [G11C 16/08 (2013.01); G11C 16/105 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage device, comprising
a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein, said controller comprising:
secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value; and
adaptive control logic configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.