US 11,869,417 B2
Display device
Shunpei Yamazaki, Setagaya (JP); Kei Takahashi, Isehara (JP); Susumu Kawashima, Atsugi (JP); Koji Kusunoki, Isehara (JP); and Kazunori Watanabe, Machida (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Oct. 28, 2022, as Appl. No. 17/975,920.
Application 17/975,920 is a continuation of application No. 17/271,221, granted, now 11,501,695, previously published as PCT/IB2019/057395, filed on Sep. 3, 2019.
Claims priority of application No. 2018-170461 (JP), filed on Sep. 12, 2018.
Prior Publication US 2023/0046927 A1, Feb. 16, 2023
Int. Cl. G09G 3/32 (2016.01)
CPC G09G 3/32 (2013.01) [G09G 2330/028 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a pixel comprising:
a display element; and
a transistor electrically connected to the display element,
wherein the display element comprises:
a first semiconductor layer;
a light-emitting layer over the first semiconductor layer;
a second semiconductor layer over the light-emitting layer;
a first electrode over and in contact with the first semiconductor layer; and
a second electrode over and in contact with the second semiconductor layer,
wherein an insulating layer is in contact with a top surface of the first electrode and a top surface and a side surface of the second electrode, and
wherein a resin layer is in contact with the insulating layer.