US 11,868,653 B2
Memory system and method for controlling nonvolatile memory
Shinichi Kanno, Ota (JP)
Assigned to Kioxia Corporation, Minato-ku (JP)
Filed by Kioxia Corporation, Minato-ku (JP)
Filed on Mar. 17, 2023, as Appl. No. 18/122,760.
Application 18/122,760 is a continuation of application No. 17/223,094, filed on Apr. 6, 2021, granted, now 11,669,269.
Application 17/223,094 is a continuation of application No. 16/126,038, filed on Sep. 10, 2018, granted, now 11,003,385, issued on May 11, 2021.
Claims priority of application No. 2018-078422 (JP), filed on Apr. 16, 2018.
Prior Publication US 2023/0221886 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0656 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system connectable to a host, the host including a data buffer, the memory system comprising:
a nonvolatile memory including a plurality of word lines, the plurality of word lines including at least a first word line and a second word line, each of the plurality of word lines connecting a plurality of memory cells;
a write buffer; and
a controller electrically connected to the nonvolatile memory and configured to execute a multi-step write operation for writing data to the nonvolatile memory, the multi-step write operation including at least a first-step write operation and a second-step write operation, wherein
the controller is further configured to:
transfer first data from the data buffer of the host to the write buffer;
transfer the first data from the write buffer to the nonvolatile memory;
execute the first-step write operation for the first data on the plurality of memory cells connected to the first word line;
transfer second data from the data buffer of the host to the write buffer;
transfer the second data from the write buffer to the nonvolatile memory;
execute the first-step write operation for the second data on the plurality of memory cells connected to the second word line; and
in executing the second-step write operation for the first data,
determine that the first data is not stored in the write buffer;
in response to determining that the first data is not stored in the write buffer, transfer the first data from the data buffer of the host to the write buffer again;
transfer the first data from the write buffer to the nonvolatile memory again; and
execute the second-step write operation for the first data on the plurality of memory cells connected to the first word line.