US 11,868,639 B2
Providing recovered data to a new memory cell at a memory sub-system based on an unsuccessful error correction operation
Sampath K. Ratnam, Boise, ID (US); Vamsi Pavan Rayaprolu, San Jose, CA (US); Mustafa N. Kaynak, San Diego, CA (US); Sivagnanam Parthasarathy, Carlsbad, CA (US); Kishore Kumar Muchherla, Fremont, CA (US); Shane Nowell, Boise, ID (US); Peter Feeley, Boise, ID (US); and Qisong Lin, El Dorado Hills, CA (US)
Assigned to MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Jun. 17, 2021, as Appl. No. 17/350,866.
Application 17/350,866 is a continuation of application No. 16/100,681, filed on Aug. 10, 2018, granted, now 11,068,186.
Claims priority of provisional application 62/628,706, filed on Feb. 9, 2018.
Prior Publication US 2021/0311649 A1, Oct. 7, 2021
Int. Cl. G06F 3/06 (2006.01); G11C 29/52 (2006.01); G06F 11/10 (2006.01); G06F 11/14 (2006.01)
CPC G06F 3/0647 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0673 (2013.01); G06F 11/1068 (2013.01); G06F 11/1402 (2013.01); G11C 29/52 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A system comprising:
a memory component; and
a processing device, operatively coupled with the memory component, to:
adjust a program verify voltage associated with a set of data stored, by a first pass of a two-pass programming operation, at a first portion of the memory component to cause a first error rate of a first subset of the set of data to exceed a second error rate of a second subset of the set of data;
designate the first subset of the set of data as a proxy for estimating error rate of the second subset of the set of data;
determine that the second subset of the set of data is associated with an unsuccessful error correction operation;
responsive to completing a second pass of the two-pass programming operation with respect to the second subset of the set of data, recover the second subset of the set of data;
identify a second portion of the memory component; and
store the recovered second subset of the set of data at the second portion of the memory component.