US 11,867,657 B2
InGaZnO (IGZO) based system for gas detection at room temperature
Mani Teja Vijjapu, Thuwal (SA); Sandeep G. Surya, Thuwal (SA); Saravanan Yuvaraja, Thuwal (SA); and Khaled Nabil Salama, Thuwal (SA)
Assigned to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal (SA)
Appl. No. 17/767,191
Filed by KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal (SA)
PCT Filed Oct. 1, 2020, PCT No. PCT/IB2020/059220
§ 371(c)(1), (2) Date Apr. 7, 2022,
PCT Pub. No. WO2021/070021, PCT Pub. Date Apr. 15, 2021.
Claims priority of provisional application 62/913,341, filed on Oct. 10, 2019.
Prior Publication US 2022/0365022 A1, Nov. 17, 2022
Int. Cl. G01N 27/407 (2006.01); G01N 27/414 (2006.01); G01N 33/00 (2006.01)
CPC G01N 27/4075 (2013.01) [G01N 27/4141 (2013.01); G01N 33/0037 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A gas sensor comprising:
a gate electrode;
a dielectric layer covering one surface of the gate electrode;
an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and
first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively,
wherein the IGZO thin-film has an In mass concentration of 11%+/−3%, Ga mass concentration of 11%+/−3%, Zn mass concentration of 7%+/−3%, and O mass concentration of 71%+/−3%, with a sum of the mass concentrations being 100%, and
wherein the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.