CPC G01N 27/4075 (2013.01) [G01N 27/4141 (2013.01); G01N 33/0037 (2013.01)] | 19 Claims |
1. A gas sensor comprising:
a gate electrode;
a dielectric layer covering one surface of the gate electrode;
an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and
first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively,
wherein the IGZO thin-film has an In mass concentration of 11%+/−3%, Ga mass concentration of 11%+/−3%, Zn mass concentration of 7%+/−3%, and O mass concentration of 71%+/−3%, with a sum of the mass concentrations being 100%, and
wherein the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.
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