CPC F21S 43/13 (2018.01) [B60Q 1/302 (2013.01); G01S 7/4814 (2013.01); G01S 17/931 (2020.01); H01L 33/0045 (2013.01); H01L 33/46 (2013.01); H01S 5/0287 (2013.01); H01S 5/1085 (2013.01); F21Y 2115/30 (2016.08)] | 14 Claims |
1. A radiation-emitting semiconductor chip comprising
a semiconductor layer sequence having an active layer for generating electromagnetic radiation,
a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer,
a further reflector situated opposite the reflector and having a further reflector surface facing the semiconductor layer sequence, said further reflector surface extending transversely with respect to the active layer at a level of the active layer, and
a top surface extending transversely with respect to the reflector surface and having a first emission region, wherein
the semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the first emission region of the top surface,
the semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the further reflector,
the reflector and the further reflector are embodied integrally with one another, and
a main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.
|