CPC C23C 16/45553 (2013.01) [C07F 5/003 (2013.01); C08F 4/545 (2013.01); C09D 1/00 (2013.01); C23C 16/18 (2013.01); C23C 16/308 (2013.01); C23C 16/32 (2013.01); C23C 16/34 (2013.01); C23C 16/36 (2013.01); C23C 16/38 (2013.01); C23C 16/40 (2013.01); C23C 16/42 (2013.01); C23C 16/4408 (2013.01); C08F 136/02 (2013.01)] | 18 Claims |
1. A method of depositing a film, the method comprising:
exposing a substrate to a lanthanide-containing precursor to form a lanthanide species on the substrate, wherein the lanthanide-containing precursor comprises a metal coordination complex of formula (I)
LnxLy (I)
wherein
Ln is a lanthanide having an oxidation state of +3 and is selected from the group consisting of Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu,
x is 2,
y is an integer from 2 to 4,
L is selected from NR′CH2CRRO, NR′NCRO, or NR═CHCH=NR, and
R, R′ are independently selected from the group consisting of hydrogen, branched C1-12 alkyl, unbranched C1-12 alkyl, substituted C1-12 aryl, unsubstituted C1-12 aryl, branched C1-6 alkenyl, unbranched C1-6 alkenyl, branched C1-6 alkynyl, unbranched C1-6 alkynyl, acyl, alkyamido, hydrazido, silyl, aldehyde, and keto groups, and the metal coordination complex is a dimer; and
exposing the substrate to a reactant to react with the lanthanide species on the substrate to form a lanthanide film.
|