US 11,864,947 B2
Systems and methods of operation of capacitive radio frequency micro-electromechanical switches
Hans-Peter Loebl, Monschau-Imgenbroich (DE); and Sergei Shulepov, Eindhoven (NL)
Assigned to KONINKLIJKE PHILIPS N.V., Eindhoven (NL)
Appl. No. 16/471,997
Filed by KONINKLIJKE PHILIPS N.V., Eindhoven (NL)
PCT Filed Dec. 21, 2017, PCT No. PCT/EP2017/083996
§ 371(c)(1), (2) Date Jun. 20, 2019,
PCT Pub. No. WO2018/115226, PCT Pub. Date Jun. 28, 2018.
Claims priority of application No. 16206333 (EP), filed on Dec. 22, 2016.
Prior Publication US 2020/0015784 A1, Jan. 16, 2020
Int. Cl. G01N 29/06 (2006.01); G01N 29/24 (2006.01); G01N 29/34 (2006.01); H01H 1/00 (2006.01); H01H 59/00 (2006.01); A61B 8/00 (2006.01); A61B 8/08 (2006.01)
CPC A61B 8/4494 (2013.01) [A61B 8/5207 (2013.01); G01N 29/0654 (2013.01); G01N 29/2406 (2013.01); G01N 29/348 (2013.01); H01H 1/0036 (2013.01); H01H 59/0009 (2013.01); H01H 2059/0018 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A capacitive radio frequency micro-electromechanical switch (RFMEMS), comprising:
a substrate;
a first electrode connected to the substrate;
a flexible membrane at least partially spatially separated from the first electrode;
a second electrode connected to the flexible membrane; and
a dielectric stack disposed between the first electrode and the second electrode and flexible membrane, comprising:
a first dielectric layer having a first density of electrically active defects; and
a second dielectric layer having a second density of electrically active defects, lower than the first, wherein the first and second dielectric layers comprise an oxide of the same material.