US 10,892,724 B2
Wideband distributed power amplifiers and systems and methods thereof
Roland Cadotte, Jr., Freehold, NJ (US)
Assigned to Lockheed Martin Corporation, Bethesda, MD (US)
Filed by Lockheed Martin Corporation, Bethesda, MD (US)
Filed on Jan. 29, 2019, as Appl. No. 16/260,784.
Prior Publication US 2020/0244240 A1, Jul. 30, 2020
Int. Cl. H03F 1/07 (2006.01); H03F 3/60 (2006.01); H03F 1/02 (2006.01); H03F 3/21 (2006.01); H03F 3/193 (2006.01); H03F 1/56 (2006.01)
CPC H03F 3/607 (2013.01) [H03F 1/0288 (2013.01); H03F 1/56 (2013.01); H03F 3/193 (2013.01); H03F 3/211 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A distributed power amplifier comprising:
a radio frequency (RF) input terminal and an RF output terminal;
a first field effect transistor (FET) coupled at a first gate terminal thereof to the RF input terminal, and coupled at a first drain terminal thereof to the RF output terminal, the first FET having a first periphery and a first source terminal electrically connected to ground potential;
a second FET having a second gate terminal electrically coupled to the first gate terminal through a first inductor, a second drain terminal electrically coupled to the first drain terminal through a second inductor, and a second source terminal electrically connected to the ground potential, wherein:
the first FET and the second FET are in a non-uniform distributed topology with different peripheries, and
the second FET has a second periphery that is smaller than the first periphery of the first FET; and
a drain voltage terminal electrically coupled to a drain bias network through which a drain bias voltage is applied to the first drain terminal and the second drain terminal, the drain bias network excluding a resistive element.