US 10,892,478 B2
Negative electrode active material for secondary battery and preparing method thereof
Cheol Ho Park, Gyeonggi-do (KR); Min Hyun Kim, Seoul (KR); Young Pil Choi, Gyeonggi-do (KR); and Seon Kyong Kim, Seoul (KR)
Assigned to Iljin Electric Co., Ltd.
Appl. No. 15/738,649
Filed by Iljin Electric Co., Ltd., Gyeonggi-do (KR)
PCT Filed May 31, 2016, PCT No. PCT/KR2016/005759
§ 371(c)(1), (2) Date Dec. 21, 2017,
PCT Pub. No. WO2016/208882, PCT Pub. Date Dec. 29, 2016.
Claims priority of application No. 10-2016-0047098 (KR), filed on Apr. 18, 2016.
Prior Publication US 2018/0175380 A1, Jun. 21, 2018
This patent is subject to a terminal disclaimer.
Int. Cl. H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); C01B 33/037 (2006.01); H01M 10/0525 (2010.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01)
CPC H01M 4/366 (2013.01) [C01B 33/037 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/362 (2013.01); H01M 4/386 (2013.01); H01M 10/0525 (2013.01); C01P 2002/70 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A negative electrode active material for a secondary battery, comprising:
a silicon (Si) layer that is a crystal layer; and
a matrix layer formed on an outer surface of the Si layer,
wherein a crystal lattice mismatch ratio of the matrix layer to the Si layer is within 20%,
wherein an amorphization degree of a silicon alloy is 25% to 65%, and an X-Ray Diffraction (XRD) peak of the silicon alloy has a value of ISi/Imatrix>1,
wherein ISi is an intensity value of a maximum value among the XRD peaks in the silicon, and Imatrix is an intensity value of a maximum value among the remaining peaks except for an Si phase.