US 10,892,386 B2
Wafer-level light emitting diode package and method of fabricating the same
Won Cheol Seo, Ansan-si (KR); and Dae Sung Cho, Ansan-si (KR)
Assigned to SEOUL SEMICONDUCTOR CO., LTD., Ansan-si (KR)
Filed by Seoul Semiconductor Co., Ltd., Gyeonggi-do (KR)
Filed on Sep. 21, 2018, as Appl. No. 16/138,370.
Application 16/138,370 is a continuation of application No. 16/101,287, filed on Aug. 10, 2018.
Application 16/101,287 is a continuation of application No. 15/389,413, filed on Dec. 22, 2016, granted, now 10,069,048, issued on Sep. 4, 2018.
Application 15/389,413 is a continuation of application No. 15/041,907, filed on Feb. 11, 2016, granted, now 9,543,490, issued on Jan. 10, 2017.
Application 15/041,907 is a continuation of application No. 14/815,433, filed on Jul. 31, 2015, granted, now 9,293,664, issued on Mar. 22, 2016.
Application 14/815,433 is a continuation of application No. 14/708,029, filed on May 8, 2015, granted, now 9,219,196, issued on Dec. 22, 2015.
Application 14/708,029 is a continuation of application No. 13/194,317, filed on Jul. 29, 2011, granted, now 9,070,851, issued on Jun. 30, 2015.
Claims priority of application No. 10-2010-0092807 (KR), filed on Sep. 24, 2010; and application No. 10-2010-0092808 (KR), filed on Sep. 24, 2010.
Prior Publication US 2019/0035990 A1, Jan. 31, 2019
Int. Cl. H01L 33/00 (2010.01); H01L 33/56 (2010.01); H01L 33/42 (2010.01); H01L 33/50 (2010.01); H01L 33/44 (2010.01); H01L 33/40 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01); H01L 33/48 (2010.01); H01L 33/10 (2010.01); H01L 33/24 (2010.01); H01L 33/64 (2010.01); H01L 33/22 (2010.01); H01L 33/58 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01)
CPC H01L 33/56 (2013.01) [H01L 27/15 (2013.01); H01L 27/153 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/486 (2013.01); H01L 33/50 (2013.01); H01L 33/502 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 33/642 (2013.01); H01L 33/647 (2013.01); H01L 33/20 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0075 (2013.01)] 37 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) package, comprising one or more light emitting diodes to emit light, wherein each single light emitting diode includes:
a semiconductor stack comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer that is interposed between the first and second semiconductor layers to generate light under an electrical signal applied to the first and second type semiconductor layers, the first conductive type semiconductor layer shaped to include an inclined side wall;
means in the second conductive type semiconductor layer and the active layer for exposing the first conductive type semiconductor layer;
a first bump arranged on a first side of the semiconductor stack and electrically coupled to an exposed part of the first conductive type semiconductor layer;
a second bump arranged on the first side of the semiconductor stack and electrically coupled to the second conductive type semiconductor layer;
a protective insulation layer covering an entire sidewall of the semiconductor stack of each light emitting diode; and
an electrically conductive material on the first side of the semiconductor stack between, and electrically insulated from, the first and second bumps to dissipate heat from the LED package.