US 10,892,380 B2
Light-emitting device
Yi-Ming Chen, Hsinchu (TW); Hao-Min Ku, Hsinchu (TW); Chih-Chiang Lu, Hsinchu (TW); and Tzu-Chieh Hsu, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Nov. 4, 2019, as Appl. No. 16/673,312.
Application 16/673,312 is a continuation of application No. 15/793,611, filed on Oct. 25, 2017, abandoned.
Application 15/793,611 is a continuation of application No. 14/261,368, filed on Apr. 24, 2014, granted, now 9,831,384, issued on Nov. 28, 2017.
Claims priority of application No. 102114988 A (TW), filed on Apr. 25, 2013.
Prior Publication US 2020/0066935 A1, Feb. 27, 2020
Int. Cl. H01L 33/10 (2010.01); H01L 33/40 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/10 (2013.01) [H01L 33/405 (2013.01); H01L 33/38 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
a substrate;
a bonding layer on the substrate;
a light-emitting stack on the bonding layer and having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer between the first-type semiconductor layer and the second-type semiconductor layer;
a reflective structure between the first-type semiconductor layer and the substrate;
a void between the substrate and the light-emitting stack;
a first interface between the substrate and the light-emitting stack; and
a second interface on the void;
wherein the void is enclosed and embedded within the light-emitting device and directly contacts the bonding layer, the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface.