US 10,892,378 B2
Method of making a semi-polar nitride layer on a crystalline substrate
Guy Feuillet, Saint-Martin D'Uriage (FR); Michel El Khoury Maroun, Antibes (FR); Philippe Vennegues, Antibes (FR); and Jesus Zuniga Perez, Biot (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
Appl. No. 16/78,203
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
PCT Filed Feb. 21, 2017, PCT No. PCT/EP2017/053830
§ 371(c)(1), (2) Date Aug. 21, 2018,
PCT Pub. No. WO2017/144429, PCT Pub. Date Aug. 31, 2017.
Claims priority of application No. 16 51433 (FR), filed on Feb. 22, 2016.
Prior Publication US 2019/0081204 A1, Mar. 14, 2019
Int. Cl. H01L 33/00 (2010.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/007 (2013.01) [C30B 25/186 (2013.01); C30B 29/406 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for obtaining at least one semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, the method comprising:
(i) etching a plurality of parallel grooves from the upper surface of the crystalline substrate, each groove comprising at least two opposed inclined facets, at least one of the two opposed facets having a crystalline orientation <111>;
(ii) forming a mask above the upper surface of the crystalline substrate such that the facets opposite to the facets having the crystalline orientation <111> are masked and that the facets having the crystalline orientation <111> are not masked; and
(iii) after forming the mask in (ii), forming the semi-polar nitride layer by epitaxial growth from the non-masked facets having the crystalline orientation <111>;
wherein forming the semi-polar nitride layer in (iii) comprises:
at least one first epitaxial growth phase, carried out from the non-masked facets having the crystalline orientation <111> so as to form a seed in a plurality at least of parallel grooves;
interrupting of the first epitaxial growth phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 1011;
a surface treatment comprising a modification of an upper portion of the seed by placing the seed in presence with at least one gas comprising silicon so as to form on the surface of the seed a modified portion comprising silicon; and
at least one second epitaxial growth phase of the material, carried out from the inclined facet having the crystalline orientation 0001, the second epitaxial growth phase being continued until coalescence of seeds of adjacent parallel grooves.