US 10,892,358 B1
Insulating structure of high electron mobility transistor and manufacturing method thereof
Chun-Ming Chang, Kaohsiung (TW); and Wen-Jung Liao, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jul. 29, 2019, as Appl. No. 16/525,525.
Claims priority of application No. 2019 1 0618716 (CN), filed on Jul. 10, 2019.
Int. Cl. H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7787 (2013.01) [H01L 21/02178 (2013.01); H01L 21/02194 (2013.01); H01L 29/66462 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An insulating structure of a high electron mobility transistor (HEMT), comprising:
a gallium nitride layer;
a buffer layer located below the gallium nitride layer;
an aluminum gallium nitride layer on the gallium nitride layer;
an insulating doped region located in the gallium nitride layer and the aluminum gallium nitride layer, wherein the range of the insulating doped region comprises part of the gallium nitride layer, part of the aluminum gallium nitride layer and part of the buffer layer; and
two sidewall insulating structures positioned at two sides of the insulating doped region respectively.