US 10,892,357 B2
Double-channel HEMT device and manufacturing method thereof
Ferdinando Iucolano, Gravina di Catania (IT); and Alessandro Chini, Modena (IT)
Assigned to STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed on Jun. 4, 2019, as Appl. No. 16/431,642.
Application 16/431,642 is a continuation of application No. 15/393,945, filed on Dec. 29, 2016, granted, now 10,381,470.
Claims priority of application No. 16425047 (EP), filed on May 30, 2016.
Prior Publication US 2019/0288100 A1, Sep. 19, 2019
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/7787 (2013.01) [H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/66462 (2013.01); H01L 29/66522 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a semiconductor body including a first layer of a first III-V compound semiconductor material, a second layer of a second III-V compound semiconductor material over the first layer, and a third layer of a third III-V compound semiconductor material over the second layer;
a gate structure, which contacts the first layer in a first direction, contacts the second layer in a second direction that is different from the first direction, and is separated from a first portion of the third layer in the second direction, a distance between a gate electrode of the gate structure and the first portion of the third layer being substantially equal to or larger than 5 μm; and
a source structure that contacts the first layer in the first direction, contacts the second layer in the second direction, and contacts a second portion of the third layer in the second direction, wherein the second portion of the third layer contacts the gate structure in the second direction.