US 10,892,345 B2
Semiconductor device
Sunmin Moon, Yongin-si (KR); Young-Lim Park, Anyang-si (KR); Kyuho Cho, Hwaseong-si (KR); and Hanjin Lim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 31, 2018, as Appl. No. 15/995,049.
Claims priority of application No. 10-2017-0086598 (KR), filed on Jul. 7, 2017.
Prior Publication US 2019/0013391 A1, Jan. 10, 2019
Int. Cl. H01L 29/51 (2006.01); H01L 21/762 (2006.01); H01L 29/15 (2006.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01)
CPC H01L 29/517 (2013.01) [H01L 21/76221 (2013.01); H01L 27/10852 (2013.01); H01L 28/90 (2013.01); H01L 29/0649 (2013.01); H01L 29/152 (2013.01); H01L 29/518 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom electrode disposed on a substrate;
a top electrode disposed on the bottom electrode; and
a conductive seed layer; and
a dielectric layer including:
a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure having a vertical lattice constant and a horizontal lattice constant; and
an oxidation seed layer including an oxidation seed material,
wherein the hafnium oxide layer is disposed between the conductive seed layer and the oxidation seed layer,
wherein the oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of the horizontal lattice constant and the vertical lattice constant of the hafnium oxide, and
wherein the conductive seed layer comprises a conductive seed material including a lattice constant having a lattice mismatch of 2% or less with one of the horizontal lattice constant and the vertical lattice constant of the hafnium oxide.