US 10,892,278 B2
Three-dimensional semiconductor devices
Ji-Hoon Choi, Seongnam-si (KR); Sunggil Kim, Yongin-si (KR); Seulye Kim, Seoul (KR); Hongsuk Kim, Yongin-si (KR); Phil Ouk Nam, Suwon-si (KR); and Jaeyoung Ahn, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 11, 2019, as Appl. No. 16/509,169.
Application 16/509,169 is a division of application No. 15/849,121, filed on Dec. 20, 2017, granted, now 10,396,094.
Claims priority of application No. 10-2017-0053103 (KR), filed on Apr. 25, 2017.
Prior Publication US 2019/0333937 A1, Oct. 31, 2019
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/11582 (2017.01); H01L 29/06 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/11565 (2017.01); H01L 29/10 (2006.01); H01L 21/28 (2006.01); H01L 27/1157 (2017.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/51 (2006.01)
CPC H01L 27/11582 (2013.01) [H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/40117 (2019.08); H01L 29/66833 (2013.01); H01L 29/7827 (2013.01); H01L 29/7926 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66553 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A three-dimensional semiconductor device comprising:
a stack of layers comprising gate electrodes disposed one over another on a substrate;
a channel structure extending through the gate electrodes and connected to the substrate;
an insulating gap-fill pattern disposed within the channel structure and surrounded by the channel structure as viewed in a plan view; and
a conductive pattern on the insulating gap-fill pattern, wherein:
a portion of the insulating gap-fill pattern extends into the conductive pattern,
at least a portion of the conductive pattern is interposed between the portion of the insulating gap-fill pattern and the channel structure, and
the portion of the insulating gap-fill pattern is spaced apart from the channel structure by the at least a portion of the conductive pattern.