US 10,892,265 B2
Word line structure and method of manufacturing the same
Chi-Min Chen, New Taipei (TW); Yung-Tai Hung, Chiayi (TW); Tuung Luoh, Taipei (TW); Ta-Hung Yang, Miaoli County (TW); and Kuang-Chao Chen, Taipei (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX International Co., Ltd., Hsinchu (TW)
Filed on Feb. 27, 2019, as Appl. No. 16/287,910.
Prior Publication US 2020/0273868 A1, Aug. 27, 2020
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 27/11521 (2017.01); G11C 8/14 (2006.01)
CPC H01L 27/11521 (2013.01) [G11C 8/14 (2013.01); H01L 21/76886 (2013.01); H01L 21/76889 (2013.01); H01L 23/53209 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A word line structure, comprising:
a stack structure disposed on a substrate; and
a metal silicide structure disposed on the stack structure, wherein the metal silicide structure comprises a first metal element, a second metal element, and a silicon element, the first metal element is different from the second metal element, concentrations of the first metal element and the second metal element gradually decrease along a direction from a top surface of the metal silicide structure to the substrate, and a concentration of the silicon element does not gradually increase or decrease along the direction from the top surface of the metal silicide structure to the substrate.