US 10,892,258 B2
ESD-robust stacked driver
Marcin Grad, Bemmel (NL); Paul H. Cappon, Wijchen (NL); and Taede Smedes, Beuningen (NL)
Assigned to NXP B.V., Eindhoven (NL)
Filed by NXP B.V., Eindhoven (NL)
Filed on Jan. 4, 2019, as Appl. No. 16/239,801.
Prior Publication US 2020/0219867 A1, Jul. 9, 2020
Int. Cl. H01L 27/02 (2006.01); H04L 25/02 (2006.01)
CPC H01L 27/0266 (2013.01) [H01L 27/0255 (2013.01); H01L 27/0259 (2013.01); H04L 25/0272 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A driver circuit with electrostatic discharge (ESD) protection comprising:
a power supply conductor;
a conductive pad;
an output driver transistor formed in a substrate or well region and electrically coupled between a circuit element and the conductive pad, the output driver transistor comprising a first MOSFET gate electrode coupled to receive a control signal, a source node coupled to the circuit element, and a drain node coupled to the conductive pad;
an ESD bypass transistor formed in the substrate or well region and electrically coupled in series with the output driver transistor between the power supply conductor and the source node of the output driver transistor, the ESD bypass transistor comprising a second MOSFET gate electrode and a source node coupled directly or indirectly to the power supply conductor and a drain node coupled to the source node of the output driver transistor; and
one or more conductive interconnect layers for connecting the ESD bypass transistor in parallel with the circuit element so that the ESD bypass transistor is in an off-state during normal operation and is activated to form a parasitic bipolar junction transistor with the output driver transistor to conduct ESD current between the power supply conductor and the conductive pad during ESD events.