US 10,892,235 B2
Die seal ring and manufacturing method thereof
Shih-Che Huang, Chiayi (TW); Shih-Hsien Chen, Kaohsiung (TW); Ching-Li Yang, Pingtung County (TW); and Chih-Sheng Chang, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on Sep. 19, 2018, as Appl. No. 16/135,997.
Claims priority of application No. 2018 1 0967619 (CN), filed on Aug. 23, 2018.
Prior Publication US 2020/0066657 A1, Feb. 27, 2020
Int. Cl. H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/58 (2006.01); H01L 23/10 (2006.01); H01L 23/522 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 21/4846 (2013.01); H01L 21/7682 (2013.01); H01L 23/10 (2013.01); H01L 23/522 (2013.01); H01L 23/562 (2013.01); H01L 21/76807 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A die seal ring, comprising: a substrate; a dielectric layer disposed on the substrate; conductive layers stacked on the substrate and located in the dielectric layer, wherein each of the conductive layers comprises: a first conductive portion; and a second conductive portion disposed on the first conductive portion, wherein a width of the first conductive portion is smaller than a width of the second conductive portion, wherein a first air gap is disposed between a sidewall of the first conductive portion and the dielectric layer, and a second air gap is disposed between a sidewall of the second conductive portion and the dielectric layer; and a first strengthening layer disposed between the first air gap and the dielectric layer and between the second air gap and the dielectric layer, wherein the first air gap is located between the first strengthening layer and the first conductive portion, the second air gap is located between the first strengthening layer and the second conductive portion, and a portion of the first strengthening layer is directly below a bottom surface of the first conductive portion, wherein a material of the first strengthening layer comprises aluminum nitride, titanium nitride, or tantalum nitride.