US 10,892,233 B2
Mitigating moisture-driven degradation of features designed to prevent structural failure of semiconductor wafers
Sushumna Iruvanti, Wappingers Falls, NY (US); Shidong Li, Poughkeepsie, NY (US); Steve Ostrander, Poughkeepsie, NY (US); Jon Alfred Casey, Poughkeepsie, NY (US); and Brian Richard Sundlof, Verbank, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Oct. 31, 2018, as Appl. No. 16/177,100.
Prior Publication US 2020/0135662 A1, Apr. 30, 2020
Int. Cl. H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/26 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/564 (2013.01) [H01L 21/0254 (2013.01); H01L 21/76877 (2013.01); H01L 23/26 (2013.01); H01L 23/562 (2013.01); H01L 24/16 (2013.01); H01L 2924/35121 (2013.01)] 7 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a semiconductor die having an edge;
an inboard crack stop, formed in the die, that extends parallel to the die edge;
an outboard crack stop, formed in the die, that extends parallel to the die edge between the inboard crack stop and the die edge;
a moisture barrier, embedded in the die, inboard of the inboard crack stop;
a groove, formed in an upper surface of the die, that extends parallel to the crack stop between the outboard crack stop and the die edge; and
a first moisture barrier material that fills the entire depth of the groove.