US 10,892,209 B2
Semiconductor device with metal die attach to substrate with multi-size cavity
Benjamin Stassen Cook, Addison, TX (US); Nazila Dadvand, Richardson, TX (US); and Sreenivasan Koduri, Allen, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Mar. 25, 2019, as Appl. No. 16/363,468.
Prior Publication US 2020/0312747 A1, Oct. 1, 2020
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01)
CPC H01L 23/49513 (2013.01) [H01L 21/4871 (2013.01); H01L 23/49503 (2013.01); H01L 23/49548 (2013.01); H01L 23/49568 (2013.01); H01L 23/49582 (2013.01); H01L 2224/32245 (2013.01)] 24 Claims
OG exemplary drawing
1. A semiconductor device, comprising:
a metal substrate including a through-hole aperture having a multi-size cavity having a larger area top cavity portion above a smaller area bottom cavity portion that defines a first ring around the bottom cavity portion;
a semiconductor die having a top side with bond pads thereon and a back side with a metal (BSM) layer thereon is mounted top side up with the BSM layer on the first ring; and
a metal die attach layer directly contacting at least a portion of the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.