US 10,892,209 B2
Semiconductor device with metal die attach to substrate with multi-size cavity
Benjamin Stassen Cook, Addison, TX (US); Nazila Dadvand, Richardson, TX (US); and Sreenivasan Koduri, Allen, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Mar. 25, 2019, as Appl. No. 16/363,468.
Prior Publication US 2020/0312747 A1, Oct. 1, 2020
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01)
CPC H01L 23/49513 (2013.01) [H01L 21/4871 (2013.01); H01L 23/49503 (2013.01); H01L 23/49548 (2013.01); H01L 23/49568 (2013.01); H01L 23/49582 (2013.01); H01L 2224/32245 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a metal substrate including a through-hole aperture having a multi-size cavity having a larger area top cavity portion above a smaller area bottom cavity portion that defines a first ring around the bottom cavity portion;
a semiconductor die having a top side with bond pads thereon and a back side with a metal (BSM) layer thereon is mounted top side up with the BSM layer on the first ring; and
a metal die attach layer directly contacting at least a portion of the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.