US 10,892,198 B2
Systems and methods for improved performance in semiconductor processing
Chirantha P. Rodrigo, Santa Clara, CA (US); Suketu A. Parikh, San Jose, CA (US); Tsz Keung Cheung, San Jose, CA (US); Satya Gowthami Achanta, Fremont, CA (US); Jingchun Zhang, Cupertino, CA (US); Saravjeet Singh, Sunnyvale, CA (US); and Tae Won Kim, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 14, 2018, as Appl. No. 16/131,942.
Prior Publication US 2020/0091018 A1, Mar. 19, 2020
Int. Cl. H01L 21/768 (2006.01); H01L 21/66 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01)
CPC H01L 22/26 (2013.01) [H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32862 (2013.01); H01J 37/32972 (2013.01); H01L 21/3065 (2013.01); H01J 2237/334 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An etching method comprising:
flowing a hydrogen-containing precursor into a semiconductor processing chamber;
flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber;
forming a plasma of the fluorine-containing precursor in the remote plasma region;
etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber;
measuring a radical density within the remote plasma region during the etching; and
halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.