US 10,892,194 B2
Semiconductor device and method for fabricating the same
Fu-Jung Chuang, Kaohsiung (TW); Ching-Ling Lin, Kaohsiung (TW); Po-Jen Chuang, Kaohsiung (TW); Yu-Ren Wang, Tainan (TW); Wen-An Liang, Tainan (TW); Chia-Ming Kuo, Kaohsiung (TW); Guan-Wei Huang, Tainan (TW); Yuan-Yu Chung, Tainan (TW); and I-Ming Tseng, Kaohsiung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jun. 29, 2020, as Appl. No. 16/914,483.
Application 16/589,032 is a division of application No. 16/030,871, filed on Jul. 10, 2018, granted, now 10,475,709, issued on Nov. 12, 2019.
Application 16/914,483 is a continuation of application No. 16/782,083, filed on Feb. 5, 2020, granted, now 10,741,455.
Application 16/782,083 is a continuation of application No. 16/589,032, filed on Sep. 30, 2019, granted, now 10,607,897, issued on Mar. 31, 2020.
Prior Publication US 2020/0328126 A1, Oct. 15, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/823878 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin-shaped structure on a substrate;
a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, wherein the SDB structure comprises silicon oxycarbonitride (SiOCN); and
a gate structure on the SDB structure, wherein the gate structure comprises a metal gate and the metal gate comprises a n-type work function metal layer or a p-type work function metal layer.