US 10,892,186 B2
Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect
Ben-Li Sheu, Sunnyvale, CA (US); Feng Q. Liu, San Jose, CA (US); Tae Hong Ha, San Jose, CA (US); Mei Chang, Saratoga, CA (US); and Shirish Pethe, Cupertino, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 12, 2018, as Appl. No. 16/159,128.
Claims priority of provisional application 62/572,447, filed on Oct. 14, 2017.
Prior Publication US 2019/0115254 A1, Apr. 18, 2019
Int. Cl. H01L 21/768 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 14/34 (2006.01); C23C 16/04 (2006.01); C23C 14/04 (2006.01); C23C 14/02 (2006.01); C23C 16/18 (2006.01); C23C 14/14 (2006.01)
CPC H01L 21/76843 (2013.01) [C23C 14/025 (2013.01); C23C 14/046 (2013.01); C23C 14/14 (2013.01); C23C 14/34 (2013.01); C23C 16/045 (2013.01); C23C 16/18 (2013.01); C23C 16/34 (2013.01); C23C 16/4411 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/45553 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of gapfilling, the method comprising:
forming a copper gapfill seed layer by atomic layer deposition (ALD) on a substrate surface having a feature thereon, the atomic layer deposition occurring at a first temperature; and
filling the feature with copper by physical vapor deposition (PVD) at a second temperature greater than the first temperature to form a seam-free gapfill film,
wherein forming the copper gapfill seed layer comprises depositing a copper nitride film and converting the copper nitride film to a copper film by thermal decomposition prior to filling the feature with copper by PVD or at the same time as filling the feature with copper by PVD.