US 10,892,161 B2
Enhanced selective deposition process
Biao Liu, San Jose, CA (US); Cheng Pan, San Jose, CA (US); Erica Chen, Cupertino, CA (US); Srinivas D. Nemani, Sunnyvale, CA (US); Chang Ke, Sunnyvale, CA (US); and Lei Zhou, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 24, 2018, as Appl. No. 16/169,610.
Claims priority of provisional application 62/586,060, filed on Nov. 14, 2017.
Prior Publication US 2019/0148144 A1, May 16, 2019
Int. Cl. H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); C23C 16/00 (2006.01); B05D 1/18 (2006.01); H01L 21/32 (2006.01)
CPC H01L 21/02645 (2013.01) [C23C 16/00 (2013.01); H01L 21/0228 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/3105 (2013.01); H01L 21/321 (2013.01); H01L 21/768 (2013.01); H01L 23/293 (2013.01); H01L 23/3171 (2013.01); B05D 1/185 (2013.01); H01L 21/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a structure with desired materials on a substrate comprising:
supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate;
selectively forming a passivation layer on a first material of the substrate;
selectively forming self assembled monolayers on a second material of the substrate; and
selectively forming a material layer on the passivation layer.
 
16. A method of forming a structure with desired materials on a substrate for semiconductor applications comprising:
selectively forming a passivation layer on a first material of a substrate, wherein the passivation layer comprises a metal material having hydro-group (—H) or —OCH3 group attached thereto;
selectively forming self assembled monolayers on a second material of the substrate; and
selectively forming a material layer on the passivation layer using an atomic layer deposition process.