US 10,892,142 B2
System for fabricating a semiconductor device
Sangjean Jeon, Suwon-si (KR); Jinyoung Park, Anyang-si (KR); Chanhoon Park, Osan-si (KR); Hoyong Park, Hwaseong-si (KR); Jin Young Bang, Hwaseong-si (KR); JungHwan Um, Seongnam-si (KR); Il Sup Choi, Yongin-si (KR); and Je-Woo Han, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 7, 2018, as Appl. No. 16/182,737.
Claims priority of application No. 10-2018-0030875 (KR), filed on Mar. 16, 2018; and application No. 10-2018-0037434 (KR), filed on Mar. 30, 2018.
Prior Publication US 2019/0287766 A1, Sep. 19, 2019
Int. Cl. H01J 37/32 (2006.01); H01L 21/683 (2006.01)
CPC H01J 37/32183 (2013.01) [H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01L 21/6833 (2013.01); H01J 37/32091 (2013.01); H01J 2237/332 (2013.01); H01J 2237/3343 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A system for fabricating a semiconductor device, comprising:
a chamber;
an electrostatic chuck provided in the chamber and used to load a substrate;
a power source configured to supply an RF power having a first frequency to the electrostatic chuck;
an impedance matcher provided between the power source and the electrostatic chuck to connect the power source to the electrostatic chuck; and
a power transmission unit connecting the electrostatic chuck to the impedance matcher, wherein the power transmission unit comprises:
a power rod connected to the electrostatic chuck, the power rod having a first outer diameter; and
a coaxial cable including an inner wire, an outer wire, and a dielectric material between the outer and inner wires,
wherein the inner wire connects the power rod to the impedance matcher and has a second outer diameter less than the first outer diameter,
wherein the outer wire is directly connected to the chamber and is provided to enclose the inner wire and has a first inner diameter less than the first outer diameter and greater than the second outer diameter, and
wherein a ratio of the first inner diameter to the second outer diameter is greater than a dielectric constant of the dielectric material and less than three times the dielectric constant of the dielectric material, and wherein the first outer diameter of the power rod is 120 mm;
wherein the impedance matcher is configured to match chamber impedance of the RF power in the chamber,
wherein the chamber generates second to fourth harmonics having second to fourth frequencies corresponding to integral multiples of the first frequency using the RF power,
wherein the chamber impedance of the chamber includes real values and imaginary values of the second to fourth harmonics,
wherein an absolute value of the imaginary value of the chamber impedance for the third harmonic is greater than 10, and
wherein the chamber impedance of the chamber further includes real value and imaginary values of the RF power,
wherein an absolute value of the imaginary value of the chamber impedance for the RF power is less than 100, and
wherein the first frequency is 60 MHz.