US 10,892,071 B1
Thin film resistor element
Cheng-Chung Chiu, Hsinchu County (TW); and Chi-Yu Lu, Hsinchu County (TW)
Assigned to VIKING TECH CORPORATION, Hsinchu County (TW)
Filed by VIKING TECH CORPORATION, Hsinchu County (TW)
Filed on Mar. 5, 2020, as Appl. No. 16/810,231.
Claims priority of application No. 108146445 A (TW), filed on Dec. 18, 2019.
Int. Cl. H01C 7/00 (2006.01); H01C 17/075 (2006.01); H01C 1/142 (2006.01)
CPC H01C 7/006 (2013.01) [H01C 1/142 (2013.01); H01C 17/075 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A thin film resistor element, comprising:
a substrate;
a TaN layer disposed on an upper surface of the substrate;
a Ta2O5 layer disposed on the TaN layer, wherein a thickness of the Ta2O5 layer ranges from 50 to 200 nanometers (nm); and
two electrodes made by an electrode layer separately disposed at both ends of the thin film resistor element, wherein the electrode layer is electrically connected to the TaN layer and the Ta2O5 layer.