US 10,892,010 B2
Method for controlling accumulated resistance property of ReRAM device
Kuang-Hao Chiang, Taoyuan (TW); and Yu-Hsuan Lin, Taichung (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Feb. 13, 2019, as Appl. No. 16/274,301.
Prior Publication US 2020/0258573 A1, Aug. 13, 2020
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01)
CPC G11C 13/0069 (2013.01) [G11C 13/0007 (2013.01); G11C 13/0097 (2013.01); H01L 27/24 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for controlling accumulated resistance property of a ReRAM device comprising:
providing a ReRAM device including a first metal layer, a second metal layer, a first metal oxide layer and an oxygen control layer, wherein the first metal oxide layer is disposed between the first metal layer and the second metal layer; the oxygen control layer is disposed between the first metal oxide layer and one of the first metal layer and the second metal layer; and
adjusting an oxygen content of the oxygen control layer to make the oxygen control layer having a predetermined accumulated resistance property when a predetermined programming pulse set is applied the ReRAM device, wherein the oxygen content of the oxygen control layer is gradually increased at a decreasing rate.