US 10,890,935 B2
Bandgap current architecture optimized for size and accuracy
Guillaume Mouret, Toulouse (FR); Yann Cargouet, Toulouse (FR); and Thierry Sicard, Haute Garonne (FR)
Assigned to NXP USA, Inc., Austin, TX (US)
Filed by NXP USA, Inc., Austin, TX (US)
Filed on Feb. 22, 2019, as Appl. No. 16/282,847.
Claims priority of application No. 19305073 (EP), filed on Jan. 21, 2019.
Prior Publication US 2020/0233445 A1, Jul. 23, 2020
Int. Cl. G05F 1/46 (2006.01); G05F 3/26 (2006.01)
CPC G05F 3/267 (2013.01) [G05F 1/462 (2013.01); G05F 1/46 (2013.01)] 10 Claims
OG exemplary drawing
1. A low voltage bandgap reference circuit comprising:
a first current generator comprising first and second circuit branches respectively comprising first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor in response to a reference voltage, wherein said first current varies proportionally as a function of temperature;
a second current generator comprising a third circuit branch comprising one or more field effect transistors and no bipolar transistors for generating a second current to counteract for the variation of said first current, wherein said second current varies inversely as a function of temperature; and
a third circuit configured to generate a bandgap reference current in response to the first current and the second current, wherein the third circuit comprises a resistor connected between a ground reference and a common node directly connected to the first, second, and third circuit branches.