US 10,890,712 B2
Photonic and electric devices on a common layer
Mohammad Soitani, Belmont, MA (US); and Eduardo M. Chumbes, Andover, MA (US)
Assigned to Raytheon BBN Technologies Corp., Cambridge, MA (US); and Raytheon Company, Waltham, MA (US)
Filed by Raytheon BBN Technologies Corp., Cambridge, MA (US); and Raytheon Company, Waltham, MA (US)
Filed on Dec. 20, 2018, as Appl. No. 16/227,764.
Claims priority of provisional application 62/670,261, filed on May 11, 2018.
Claims priority of provisional application 62/670,273, filed on May 11, 2018.
Prior Publication US 2019/0346624 A1, Nov. 14, 2019
Int. Cl. G02B 6/12 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01S 5/343 (2006.01); G02B 6/122 (2006.01)
CPC G02B 6/12 (2013.01) [G02B 6/122 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01S 5/34333 (2013.01); G02B 2006/1213 (2013.01); G02B 2006/12035 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12142 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A structure, comprising: a photonic device and an electronic device on a common single crystal structure, such single crystal structure comprising: a Group III-N compound layer and a layer of Aluminum Scandium Nitride, the layer of Aluminum Scandium Nitride being common to the photonic device and the electronic device.