US 10,890,560 B2
Forming nanoscale pores in a semiconductor structure utilizing nanotubes as a sacrificial template
Juntao Li, Cohoes, NY (US); Kangguo Cheng, Schenectady, NY (US); Peng Xu, Santa Clara, CA (US); and Zhenxing Bi, Schenectady, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on May 21, 2018, as Appl. No. 15/985,266.
Prior Publication US 2019/0353615 A1, Nov. 21, 2019
Int. Cl. G01N 27/447 (2006.01); B82B 3/00 (2006.01); G01N 33/487 (2006.01); B82B 1/00 (2006.01); B82Y 40/00 (2011.01); B82Y 15/00 (2011.01)
CPC G01N 27/44791 (2013.01) [B82B 1/001 (2013.01); B82B 1/005 (2013.01); B82B 3/008 (2013.01); B82B 3/0014 (2013.01); B82B 3/0019 (2013.01); G01N 33/48721 (2013.01); B82Y 15/00 (2013.01); B82Y 40/00 (2013.01)] 18 Claims
OG exemplary drawing
1. A method of forming a semiconductor structure, comprising:
forming two or more catalyst nanoparticles from a metal layer disposed over a substrate in two or more openings of a hard mask patterned over the metal layer;
growing two or more carbon nanotubes using the catalyst nanoparticles;
removing the carbon nanotubes to form two or more nanoscale pores;
wherein forming the catalyst nanoparticles comprises performing a thermal anneal to form the catalyst nanoparticles from portions of the metal layer exposed by the patterned hard mask;
forming inner sidewall spacers covering exposed sidewalls of the metal layer and the patterned hard mask;
growing the carbon nanotubes using the catalyst nanoparticles, a diameter of the carbon nanotubes being controlled by a size of the catalyst nanoparticles;
filling an oxide over the patterned hard mask, the inner sidewall spacers, the carbon nanotubes and the catalyst nanoparticles; and
recessing the oxide to expose the catalyst nanoparticles.