US 10,890,553 B2
Sensing device, sensing apparatus and sensing system
Kunal Kashyap, Hsinchu (TW); Kun-Wei Kao, Hsinchu (TW); Yih-Hua Renn, Hsinchu (TW); Meng-Lun Tsai, Hsinchu (TW); Zong-Xi Chen, Hsinchu (TW); Hsin-Mao Liu, Hsinchu (TW); Jui-Hung Yeh, Hsinchu (TW); and Hung-Chi Wang, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Nov. 6, 2017, as Appl. No. 15/804,455.
Claims priority of provisional application 62/497,108, filed on Nov. 7, 2016.
Prior Publication US 2018/0128761 A1, May 10, 2018
Int. Cl. G01N 27/414 (2006.01); H01L 29/778 (2006.01); H01L 23/34 (2006.01); G01N 27/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/10 (2006.01); H01L 23/31 (2006.01)
CPC G01N 27/414 (2013.01) [G01N 27/02 (2013.01); G01N 27/4141 (2013.01); H01L 23/345 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7787 (2013.01); H01L 23/3171 (2013.01); H01L 29/1029 (2013.01); H01L 29/7786 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A sensing device, comprising:
a substrate made of an insulating material;
a first III-V compound stack in direct contact with the substrate and comprising a first semiconductor layer, and a second semiconductor layer formed on the first semiconductor layer; and
a second III-V compound stack in direct contact with the substrate, and comprising a third semiconductor layer, a fourth semiconductor layer formed on the third semiconductor layer,
wherein the first III-V compound stack is separated from the second III-V compound stack by a trench, the trench has a lowest end which is higher than bottom surfaces of the first semiconductor layer and the third semiconductor layer.