US 10,889,914 B2
Location-specific growth and transfer of single crystalline TMD monolayer arrays
Eui-Hyeok Yang, Fort Lee, NJ (US); Xiaotian Wang, Secaucus, NJ (US); Kyungnam Kang, Edgewater, NJ (US); and Siwei Chen, Jersey City, NJ (US)
Assigned to THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY, Hoboken, NJ (US)
Filed by THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY, Hoboken, NJ (US)
Filed on Feb. 12, 2019, as Appl. No. 16/273,601.
Claims priority of provisional application 62/629,408, filed on Feb. 12, 2018.
Prior Publication US 2019/0256998 A1, Aug. 22, 2019
Int. Cl. C09J 7/00 (2018.01); C09J 5/00 (2006.01); C23C 16/00 (2006.01); C30B 25/00 (2006.01); C30B 29/00 (2006.01); G03F 7/00 (2006.01); H01L 21/00 (2006.01); C30B 25/04 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C30B 25/18 (2006.01); C30B 29/46 (2006.01); C09J 5/06 (2006.01); C09J 7/35 (2018.01); H01L 21/20 (2006.01)
CPC C30B 25/04 (2013.01) [C09J 5/06 (2013.01); C09J 7/35 (2018.01); C23C 16/042 (2013.01); C23C 16/305 (2013.01); C30B 25/18 (2013.01); C30B 29/46 (2013.01); G03F 7/0015 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02568 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/2007 (2013.01); H01L 21/6835 (2013.01); H01L 21/7813 (2013.01); C09J 2203/326 (2013.01); H01L 2221/68363 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for growing patterned transition metal dichalcogenides on a substrate, said method comprising the steps of:
providing a source substrate having a first surface comprising a patterned film;
providing a growth substrate that is void of a patterned film;
soaking said growth substrate in a potassium hydroxide solution, for a length of time sufficient to allow said growth substrate to undergo an increase in surface energy;
placing said source substrate and said growth substrate face-to-face after said soaking step to thereby form a composite structure comprising said source substrate and said growth substrate; and
subjecting said composite structure to a chemical vapor deposition process to thereby create a first transition metal dichalcogenide layer on said growth substrate and a second transition metal dichalcogenide layer on said source substrate, both said first transition metal dichalcogenide layer and said second transition metal dichalcogenide layer being patterned in accordance with said patterned film.