US 10,889,097 B2
Wafer debonding system and method
Chang-Chen Tsao, Tainan (TW); Kuo Liang Lu, Hsinchu (TW); Ru-Liang Lee, Hsinchu (TW); Sheng-Hsiang Chuang, Hsin-Chu (TW); Yu-Hung Cheng, Tainan (TW); Yeur-Luen Tu, Taichung (TW); and Cheng-Kang Hu, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Dec. 11, 2019, as Appl. No. 16/710,348.
Application 16/220,163 is a division of application No. 15/613,963, filed on Jun. 5, 2017, granted, now 10,155,369, issued on Dec. 18, 2018.
Application 16/710,348 is a continuation of application No. 16/220,163, filed on Dec. 14, 2018, granted, now 10,569,520.
Claims priority of provisional application 62/427,208, filed on Nov. 29, 2016.
Prior Publication US 2020/0108592 A1, Apr. 9, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. B32B 38/10 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H01L 21/683 (2006.01)
CPC B32B 38/10 (2013.01) [H01L 21/67011 (2013.01); H01L 21/67092 (2013.01); H01L 21/681 (2013.01); H01L 21/6835 (2013.01); H01L 21/6838 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A debonding apparatus for debonding a pair of bonded substrates, comprising:
a wafer chuck configured to hold the pair of bonded substrates on a chuck top surface;
a pair of separating blades including a first separating blade and a second separating blade placed at edges of the pair of bonded substrates, wherein the first separating blade has a first thickness that is smaller than a second thickness of the second separating blade; and
a flex wafer assembly configured to pull the pair of bonded substrates upwardly to separate a second substrate from a first substrate of the pair of bonded substrate.