US 12,193,340 B2
Switching element and memory device
Taichi Igarashi, Seoul (KR); Yuichi Ito, Seoul (KR); and Eiji Kitagawa, Seoul (KR)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 13, 2022, as Appl. No. 17/943,763.
Claims priority of application No. 2022-044327 (JP), filed on Mar. 18, 2022.
Prior Publication US 2023/0301205 A1, Sep. 21, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/043 (2023.02) [G11C 11/161 (2013.01); G11C 13/0069 (2013.01); H10B 61/00 (2023.02); H10B 63/80 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A switching element comprising:
a first electrode;
a second electrode; and
a switching material layer provided between the first electrode and the second electrode,
wherein
the switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi),
arsenic (As) contained in the switching material layer forms a plurality of cluster regions, and
silicon (Si) and oxygen (O) contained in the switching material layer form an insulating region.