US 12,193,333 B2
Solid state tunable ionic oscillator dielectric materials and resonant devices
Jonathan E. Spanier, Bala Cynwyd, PA (US); Zongquan Gu, Chalfont, PA (US); Ilya Grinberg, Bet Shemesh (IL); Atanu Samanta, Ramat Gan (IL); Haim Barak, Ramat Gan (IL); Cedric J. G. Meyers, Oakland, CA (US); and Robert A. York, Oakland, CA (US)
Assigned to Drexel University, Philadelphia, PA (US); Bar-Ilan University, Ramat Gan (IL); and The Regents of the University of California, Oakland, CA (US)
Appl. No. 17/264,726
Filed by Drexel University, Philadelphia, PA (US); Bar-Ilan University, Ramat Gan (IL); and The Regents of the University of California, Oakland, CA (US)
PCT Filed Aug. 1, 2019, PCT No. PCT/US2019/044675
§ 371(c)(1), (2) Date Jan. 29, 2021,
PCT Pub. No. WO2020/028670, PCT Pub. Date Feb. 6, 2020.
Prior Publication US 2021/0305491 A1, Sep. 30, 2021
Int. Cl. H10N 30/853 (2023.01); H01P 7/10 (2006.01)
CPC H10N 30/8554 (2023.02) [H01P 7/10 (2013.01); H10N 30/8536 (2023.02); H10N 30/8561 (2023.02)] 19 Claims
OG exemplary drawing
 
1. An article comprising a ferroelectric material including a high density of one or more fluctuating ferroelectric domain walls, wherein the article contains one or more fluctuating ferroelectric domain walls that enable efficient propagation of signals with ultra-low dielectric loss, the ultra-low dielectric loss comprising a range of 103<Q<107, or 10−3>tanδ>10−7, wherein Q refers to a quality factor, at one or more select frequencies, wherein the density of domain walls ranges from 1-100 per 50,000 nm2.