US 12,193,276 B2
Electronic device
Minsoo Choi, Hwaseong-si (KR); Seokgyu Yoon, Hwaseong-si (KR); Byeongwook Yoo, Hwaseong-si (KR); and Changwoong Chu, Hwaseong-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Feb. 28, 2022, as Appl. No. 17/652,771.
Claims priority of application No. 10-2021-0058996 (KR), filed on May 7, 2021.
Prior Publication US 2022/0359628 A1, Nov. 10, 2022
Int. Cl. H01L 51/50 (2006.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 59/122 (2023.01); H10K 59/35 (2023.01); H10K 85/20 (2023.01); H10K 101/40 (2023.01)
CPC H10K 59/122 (2023.02) [H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 59/35 (2023.02); H10K 85/211 (2023.02); H10K 2101/40 (2023.02)] 25 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a base layer; and
a display element layer disposed on the base layer and comprising a pixel definition layer including an opening therethrough, a light emitting element, and a light receiving element distinguished from the light emitting element by the pixel definition layer, each of the light emitting element and the light receiving element comprising:
a first electrode;
a hole transport region disposed on the first electrode;
an electron transport region disposed on the hole transport region; and
a second electrode disposed on the electron transport region,
wherein the light emitting element comprises a light emitting layer disposed between the hole transport region and the electron transport region, and
wherein the light receiving element comprises:
a light receiving layer disposed between the hole transport region and the electron transport region, the light receiving layer configured to convert a light incident thereto into an electrical signal;
an electron extraction layer disposed between the light receiving layer and the electron transport region, the electron extraction layer comprising an n-dopant material,
wherein the n-dopant material comprises a metal having a work function equal to or smaller than about 3.0 eV, or an organic compound having a highest energy occupied molecular orbital (HOMO) level equal to or greater than about −3.0 eV.