CPC H10K 59/1213 (2023.02) [H10K 71/00 (2023.02); H01L 27/1222 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H10K 59/1201 (2023.02)] | 13 Claims |
1. A method for manufacturing a display apparatus, the method comprising:
forming an amorphous silicon layer on a substrate;
heat-treating the amorphous silicon layer to form a heat-treated amorphous silicon layer;
doping the heat-treated amorphous silicon layer with hydrogen to form a hydrogen-doped amorphous silicon layer; and
crystallizing the hydrogen-doped amorphous silicon layer into a polycrystalline silicon layer by irradiating a laser to the hydrogen-doped amorphous silicon layer,
wherein the hydrogen-doped amorphous silicon layer includes a first portion and a second portion,
wherein the first portion is positioned between the substrate and the second portion, and
wherein a hydrogen content of the first portion is greater than a hydrogen content of the second portion.
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