US 12,193,215 B2
Semiconductor device and method for fabricating the same
Hyung-Jin Park, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jun. 16, 2022, as Appl. No. 17/841,755.
Application 17/841,755 is a continuation of application No. 16/719,003, filed on Dec. 18, 2019, granted, now 11,417,660.
Claims priority of application No. 10-2019-0070998 (KR), filed on Jun. 14, 2019.
Prior Publication US 2022/0310622 A1, Sep. 29, 2022
Int. Cl. H10B 12/00 (2023.01); G11C 5/06 (2006.01)
CPC H10B 12/315 (2023.02) [G11C 5/063 (2013.01); H10B 12/0335 (2023.02); H10B 12/056 (2023.02); H10B 12/36 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
preparing a plurality of stacked line structures including a bit line over a substrate and a line-type active layer over the bit line, wherein longest directions of the bit line and the line-type active layer extends in a first direction;
forming a plurality of island-type active layers by cutting the line-type active layer;
forming a first plug for electrically coupling the bit line to the island-type active layers, wherein a longest direction of the first plug extends in a second direction perpendicular to the first direction;
forming a word line over the island-type active layers;
forming a second plug which is coupled to both sides of each of the island-type active layers; and
forming a plurality of capacitors that are respectively coupled to the second plugs.