CPC H10B 12/30 (2023.02) [H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5283 (2013.01); H10B 12/02 (2023.02); H10B 12/50 (2023.02)] | 13 Claims |
1. A method of forming a semiconductor device, comprising the following steps:
providing a substrate, an array region located above the substrate, wherein the array region comprises a first semiconductor structure and a first dielectric layer that covers a surface of the first semiconductor structure, the first semiconductor structure comprises a capacitor array and a conductive covering layer that covers the capacitor array, and the first dielectric layer covers a surface of the conductive covering layer;
forming, in the first dielectric layer, a groove exposing the first semiconductor structure, wherein the groove runs through the first dielectric layer along a direction parallel to a surface of the substrate, the groove runs through the first dielectric layer along a direction perpendicular to the substrate and extends into the conductive covering layer; and
filling the groove with a conductive material to form an array contact line.
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