US 12,193,212 B2
Method of forming semiconductor device and semiconductor device
Feng Wu, Hefei (CN); and Sangyeol Park, Hefei (CN)
Assigned to CHANIGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Nov. 15, 2021, as Appl. No. 17/454,863.
Application 17/454,863 is a continuation of application No. PCT/CN2021/112390, filed on Aug. 13, 2021.
Claims priority of application No. 202110314338.4 (CN), filed on Mar. 24, 2021.
Prior Publication US 2022/0310611 A1, Sep. 29, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01)
CPC H10B 12/30 (2023.02) [H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/5283 (2013.01); H10B 12/02 (2023.02); H10B 12/50 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, comprising the following steps:
providing a substrate, an array region located above the substrate, wherein the array region comprises a first semiconductor structure and a first dielectric layer that covers a surface of the first semiconductor structure, the first semiconductor structure comprises a capacitor array and a conductive covering layer that covers the capacitor array, and the first dielectric layer covers a surface of the conductive covering layer;
forming, in the first dielectric layer, a groove exposing the first semiconductor structure, wherein the groove runs through the first dielectric layer along a direction parallel to a surface of the substrate, the groove runs through the first dielectric layer along a direction perpendicular to the substrate and extends into the conductive covering layer; and
filling the groove with a conductive material to form an array contact line.