| CPC H10B 12/0335 (2023.02) [H01L 21/0274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H10B 12/482 (2023.02)] | 20 Claims |
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1. A method for forming a wiring, the method comprising:
forming an insulating interlayer on a substrate, the insulating interlayer including a low-k dielectric material;
forming a first etching mask on the insulating interlayer;
performing a first etching process using the first etching mask to form a first opening through the insulating interlayer;
removing the first etching mask;
forming a protection pattern on a bottom and a side of the first opening;
forming a second etching mask on the protection pattern and the insulating interlayer;
performing a second etching process using the second etching mask to form a second opening through the insulating interlayer;
removing the second etching mask;
removing the protection pattern; and
forming the wiring in each of the first and second openings.
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