US 12,193,208 B2
Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods
Devesh Dadhich Shreeram, Boise, ID (US); Kangle Li, Boise, ID (US); Matthew N. Rocklein, Boise, ID (US); Wei Ching Huang, Central Taichung (TW); Ping-Cheng Hsu, Tokyo (JP); Sevim Korkmaz, Boise, ID (US); Sanjeev Sapra, Boise, ID (US); and An-Jen B. Cheng, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 13, 2022, as Appl. No. 17/647,902.
Claims priority of provisional application 63/139,619, filed on Jan. 20, 2021.
Prior Publication US 2022/0238532 A1, Jul. 28, 2022
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/033 (2023.02) [H10B 12/31 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A DRAM capacitor, comprising:
a first capacitor electrode comprising a proximal base disposed on a substrate and opposing portions extending from the proximal base, the opposing portions configured as a container, the opposing portions comprising a lower portion, an upper portion, and a first step transition between the lower portion and the upper portion, a width of the upper portion at the first step transition is less than a width of the lower portion at the first step transition;
a capacitor dielectric adjacent to the first capacitor electrode; and
a second capacitor electrode adjacent to the capacitor dielectric.