US 12,193,207 B2
Semiconductor device and method for manufacturing the same
Xinran Liu, Hefei (CN); and Yule Sun, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Sep. 16, 2021, as Appl. No. 17/476,794.
Application 17/476,794 is a continuation of application No. PCT/CN2021/100413, filed on Jun. 16, 2021.
Claims priority of application No. 202010962311.1 (CN), filed on Sep. 14, 2020.
Prior Publication US 2022/0085021 A1, Mar. 17, 2022
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/03 (2023.02) [H10B 12/30 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
providing a substrate and forming a film layer stack structure thereon;
etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and
patterning and etching the second region to remove the film layer stack structure within the second region; and,
wherein there are a plurality of the through holes, the substrate directly opposite to the first region comprises a plurality of storage node contact plugs, and each of the storage node contact plugs is exposed through each of the through holes in a one-to-one correspondence.